Ali, Hapipah Mohd and Hasaneen, M.F. and Wakkad, M.M. and Mohamed, H.A. (2007) Properties of transparent conducting oxides formed from CdO alloyed with In2O3. Thin Solid Films, 515 (5). pp. 3024-3029. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2006.06.037.
Full text not available from this repository.Abstract
The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO)(1-x)(In2O3)(x) have been grown by electron beam evaporation technique for different concentrations of In2O3 (x=0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from optical data and hence to increased electrical conductivity, which degraded the transparency of the films. An improvement of the electrical and optical properties of Cadmium indium oxide (CdIn2O4) has been achieved by post-deposition annealing. A resistivity value of 7 x 10(-5) Omega cm and transmittance of 92% in the near infrared region and 82% in the visible region have been obtained after annealing at 300 degrees C for 90 min in air. (c) 2006 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Additional Information: | Department of Chemistry, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA |
| Uncontrolled Keywords: | Structure properties; transmittance; optical energy gap; resistivity; carrier concentration; mobility carriers |
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Faculty of Science > Department of Chemistry |
| Depositing User: | Miss Malisa Diana |
| Date Deposited: | 11 Apr 2013 01:38 |
| Last Modified: | 24 Jan 2019 06:16 |
| URI: | http://eprints.um.edu.my/id/eprint/5512 |
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