Ali, Hapipah Mohd and El-Ghanny, H.A.A. (2008) Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films. Journal of Physics: Condensed Matter, 20 (15). ISSN 0953-8984, DOI https://doi.org/10.1088/0953-8984/20/15/155205.
Full text not available from this repository.Abstract
Thin films of (CdSe)(90)(In(2)O(3))(10), (CdSe)(90)(SnO(2))(10) and (CdSe)(90)(ZnO)(10) have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps E(g) and E(g) + Delta due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Additional Information: | Department of Chemistry, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA |
| Uncontrolled Keywords: | Beam Evaporation Technique; Cadmium Selenide; Photovoltaic Applications; Chemical-Deposition; Temperature; Thickness; Dynamics |
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Faculty of Science > Department of Chemistry |
| Depositing User: | Miss Malisa Diana |
| Date Deposited: | 11 Apr 2013 01:30 |
| Last Modified: | 29 Jan 2019 08:14 |
| URI: | http://eprints.um.edu.my/id/eprint/5483 |
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