Wang, Yan and Guan, Yizhang and Zhang, Chuang and Cao, Jiahe and Chen, Xuanyan and Ouyang, Qiangqiang and Wong, Yew Hoong and Hu, Guofeng and Tan, Chee Keong (2025) Indium alloying in ε-Ga2O3 for polarization and interfacial charge tuning. Applied Physics Letters, 126 (2). 022112. ISSN 0003-6951, DOI https://doi.org/10.1063/5.0245828.
Full text not available from this repository.Abstract
Density functional theory was utilized to assess the influence of In alloying on the spontaneous (P-sp) and piezoelectric (P-pe) polarization of epsilon-Ga2O3 heterostructures with In concentrations ranging from 0% to 50%. The analysis demonstrated a decrease in both P-sp and P-pe with an increase in In concentration, described by the equations P-sp = -9.5947x + 24.81 and P-pe = -0.6217x (where x represents the In concentration, with units in mu C/cm(2)). Additionally, the polarization-induced two-dimensional electron gas (2DEG) density within epsilon-InGaO/epsilon-Ga2O3 heterostructures was examined using a one-dimensional Schr & ouml;dinger-Poisson solver. An inverse correlation was observed between 2DEG density and epitaxial thickness across all undoped In-alloyed samples. Furthermore, achieving high 2DEG densities (exceeding 10(13) cm(-2)) is significantly facilitated by n-type doping concentrations above 10(17) cm(-3) in epsilon-InGaO. These insights not only augment the understanding of polarization effects in epsilon-Ga2O3 heterostructures but also provide a strategic framework for enhancing 2DEG density in epsilon-Ga2O3-based devices, which offers significant potential for advancing epsilon-Ga2O3-based high electron mobility transistors for power and RF applications.
| Item Type: | Article |
|---|---|
| Funders: | State Administration of Foreign Experts Affairs10.13039/501100003512, Hong Kong University of Science and Technology (Guangzhou) (QN2022030022L), State Administration of Foreign Experts Affairs China (2023A03J0003) ; (2023A03J0013) ; (2023A04J0310), Guangzhou Municipal Science and Technology Project (2022SLABFN02), Songshan Lake Materials Laboratory, Green e Materials Laboratory at The Hong Kong University of Science and Technology (Guangzhou) |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Engineering > Department of Mechanical Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 13 Mar 2025 07:06 |
| Last Modified: | 14 Mar 2025 01:00 |
| URI: | http://eprints.um.edu.my/id/eprint/47718 |
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