Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides

Kow, S.T. and Yap, Y. and Pua, C.H. and Chong, W.Y. and Law, A.W.P. and Adikan, Faisal Rafiq Mahamd and Haseeb, A.S. Md. Abdul and Ahmad, Harith (2010) Selective area rare-earth doping of planar glass samples for monolithic integration of optically passive and active waveguides. Optik, 121 (8). pp. 722-725. ISSN 0030-4026

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Official URL: https://doi.org/10.1016/j.ijleo.2008.11.003

Abstract

Successful demonstration of selective area doping of planar glass samples for monolithic integration of optically passive and active devices on a single chip is presented. Salt solution of erbium was delivered onto pre-sintered germano-silicate samples via a syringe. The samples were then consolidated to form dense glass layers containing regions doped with rare earth. Erbium tri-chloride solution, 0.1 M. was used during the solution doping phase, with the resulting erbium atomic percentage ranging from more than 0.1-0.4, increasing linearly with the number of drips applied. (C) 2008 Elsevier GmbH. All rights reserved.

Item Type: Article
Additional Information: Kow, S. T. Yap, Y. Pua, C. H. Chong, W. Y. Law, A. W. P. Adikan, F. R. Mahamd Haseeb, A. S. M. A. Ahmad, H.
Uncontrolled Keywords: Flame hydrolysis deposition; Pre-sintering process; Erbium-doped waveguide amplifier; Optical passive device; Solution doping
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Mr. Mohammed Salim Abd Rahman
Date Deposited: 06 Feb 2013 02:51
Last Modified: 11 Oct 2018 01:45
URI: http://eprints.um.edu.my/id/eprint/4669

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