Improved photoelectrochemical performance of tungsten-catalyzed graphene nanoplatelet electrodes prepared by hot-wire chemical vapor deposition at low substrate temperatures

Anuar, Nur Afira and Nor, Nurul Hidayah Mohamad and Chia, Mei Yuen and Goh, Boon Tong and Chiu, Wee Siong and Aspanut, Zarina and Awang, Rozidawati and Nakajima, Hideki and Tunmee, Sarayut and Sookhakian, Mehran and Alias, Yatimah (2024) Improved photoelectrochemical performance of tungsten-catalyzed graphene nanoplatelet electrodes prepared by hot-wire chemical vapor deposition at low substrate temperatures. Thin Solid Films, 797. p. 140330. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2024.140330.

Full text not available from this repository.
Official URL: https://doi.org/10.1016/j.tsf.2024.140330

Abstract

The current increase in demand for graphene in various energy applications such as electrode materials for supercapacitors, batteries, thermoelectric, and hydrogen production via water-splitting, the production of high-quality graphene, considering its fascinating physical and electrical properties, high-yield, and large-area has becoming more challenging at the research and development level. Therefore, in this work, graphene nanoplatelets (GNPs) were directly grown on tungsten nanoparticle (W NP)-coated p-type crystalline silicon and quartz substrates using hot-wire chemical vapor deposition at low substrate temperatures (<500 degrees C). Prior to the GNP deposition, a plasma process was employed to induce the formation of W NPs, which act as a metal catalyst for facilitating the growth of large-area and multi-layer GNPs. The W NPs were formed at substrate temperatures ranging from 250 to 550 degrees C, with the largest graphene sheet was grown at 450 degrees C. Higher substrate temperatures promote the growth of high-quality graphene layers with high intensities of G (I-G) and 2D bands (I-2D), and high I-2D/I-G ratio values. The GNP photoelectrode prepared at 450 degrees C demonstrated better photoelectrochemical responses with the highest photocurrent density of 1.65 mA/cm(2) at 1.5 V-Ag/AgCl, the lowest charge transfer resistance (14.0 k Omega), and the highest donor density (2.57 x 10 (28) cm(-3)) compared to the tungsten carbide thin film and W NP electrodes prepared at the same temperature. The effects of substrate temperature on the optical, structural, and photoelectrochemical properties of the as-grown GNPs are discussed.

Item Type: Article
Funders: Ministry of Education, Malaysia (FRGS/1/2020/STG07/UM/02/8)
Uncontrolled Keywords: Graphene; Nanoplatelets; Tungsten; Nanoparticles; Hot-wire chemical vapor deposition; Photoelectrochemical
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Department of Chemistry
Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 26 Sep 2024 03:12
Last Modified: 26 Sep 2024 03:12
URI: http://eprints.um.edu.my/id/eprint/45209

Actions (login required)

View Item View Item