Bakri, A. S. and Nafarizal, N. and Abu Bakar, A. S. and Hasnan, M. M. I. Megat and Raship, N. A. and Omar, W. I. Wan and Azman, Z. and Ali, R. A. Mohamed and Abd Majid, Wan Haliza and Ahmad, M. K. and Aldalbahi, A. (2022) Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering. Journal of Materials Science-Materials in Electronics, 33 (15). pp. 12271-12280. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-022-08186-w.
Full text not available from this repository.Abstract
Aluminium nitride (AlN) thin film is a very attractive material to be used in electronic devices, and the most popular AlN orientations that have been reported are AlN (100) and AlN (002) planes. To the best of our knowledge, still less comparison study between AlN (100) with AlN (002) orientation based on a structural relationship with the electrical properties. For that purpose, the c-axis (002) and a-axis (100) of AlN thin films are deposited by using conventional RF magnetron sputtering. Energy-dispersive spectroscopy (EDS) analysis shows that AlN (100) has a higher percentage of oxygen content than AlN (002). X-ray diffraction (XRD) reveals that (002)-oriented AlN has better crystallinity than (100)-oriented AlN. Besides, from atomic force microscope (AFM) analysis, (100)-oriented AlN shows a smaller grain size (35.97 nm) than that of (002)-oriented AlN (58.47 nm). By impedance analyser, (100)-oriented AlN thin film shows higher electrical conductivity by one order magnitude higher than (002)-oriented AlN thin film due to high dielectric permittivity, high dielectric loss, fast dielectric relaxation, and lower capacitance. Hence, this study has shown a clear comparison between AlN (100) and AlN (002) based on structural and electrical properties relationship.
| Item Type: | Article |
|---|---|
| Funders: | Universiti Tun Hussein Onn Malaysia [Grant No: H022], Universiti Malaya [Grant No: LR001A-2016A], CREST fund [Grant No: P28C1-17], King Saud University [Grant No: RSP-2021/30] |
| Uncontrolled Keywords: | Aluminium nitride (AlN); Electronic devices; Temperature |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 12 Oct 2023 06:52 |
| Last Modified: | 12 Oct 2023 06:52 |
| URI: | http://eprints.um.edu.my/id/eprint/42280 |
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