Odesanya, Kazeem Olabisi and Ahmad, Roslina and Andriyana, Andri and Ramesh, S. and Tan, Chou Yong and Wong, Yew Hoong (2023) Effects of O-2 and N-2 gas concentration on the formation of Ho2O3 gate oxide on 4H-SiC substrate. Silicon, 15 (2). pp. 755-761. ISSN 1876-990X,
Full text not available from this repository.Abstract
In this paper, the impacts of flow concentration of oxynitridation on the structural and electrical performance of a high-kappa Ho2O3 dielectric on n-type 4H-SiC were studied. The Ho2O3 films were grown using Physical vapour deposition (PVD) RF magnetron sputtering at various O-2 and N-2 gas flow concentrations from (25 - 100%), and constant temperature and period of 900 degrees C and 15 min, respectively. The results of Fourier transform infra-red (FTIR) and X-ray diffraction (XRD) analysis show that cubic c-Ho2O3 and monoclinic (b)-SiO2 crystal structures were formed in between the SiC substrate and the Ho2O3 thin films during thermal oxynitridation. The microstrain and crystallite size were obtained by Williamson-Hall (W-H) plot. The electrical measurements from the MOS capacitor revealed that 50% oxynitridation exhibited the most encouraging electrical results, with the smallest leakage current density of 6.05 x 10(-2) A/cm(2) at a breakdown field of 7.52 MV/cm and barrier height value of 18.5 eV. These results provide potential and important implications of using Ho2O3/SiC gate stack, validating the usefulness of leakage current density-breakdown electric field measurement in understanding the operation of a gate dielectric in MOS-based devices.
| Item Type: | Article |
|---|---|
| Funders: | None |
| Uncontrolled Keywords: | Rare-earth oxide; Silicon carbide; Oxygen; Nitrogen; Holmium |
| Subjects: | T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Faculty of Engineering > Department of Mechanical Engineering |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 05 Nov 2025 01:17 |
| Last Modified: | 05 Nov 2025 01:17 |
| URI: | http://eprints.um.edu.my/id/eprint/39490 |
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