Zulkifli, Nur `Adnin Akmar and Zahir, Nor Hilmi and Ripain, Atiena Husna Abdullah and Said, Suhana Mohd and Zakaria, Rozalina (2023) Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors. Nanoscale Advances, 5 (3). pp. 879-892. ISSN 2516-0230, DOI https://doi.org/10.1039/d2na00756h.
Full text not available from this repository.Abstract
Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 degrees C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 x 10(13) Jones, and a fast response speed of 8.3/13.4 mu s (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.
| Item Type: | Article |
|---|---|
| Funders: | University Malaysia [Grant No: ST048-2021] |
| Uncontrolled Keywords: | Crystallite size; Gallium nitride; Heterojunctions; III-V semiconductors; Layered semiconductors; Optical properties; Photodetectors; Photons |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering Faculty of Science |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 19 Nov 2024 07:08 |
| Last Modified: | 19 Nov 2024 07:08 |
| URI: | http://eprints.um.edu.my/id/eprint/38850 |
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