Fatahi, Negin and Hoat, D. M. and Laref, Amel and Amirian, Shorin and Reshak, A.H. and Naseri, Mosayeb (2020) 2D Hexagonal SnTe monolayer: A quasi direct band gap semiconductor with strain sensitive electronic and optical properties. European Physical Journal B, 93 (2). ISSN 1434-6028, DOI https://doi.org/10.1140/epjb/e2020-100543-6.
Full text not available from this repository.Abstract
The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of 2.00. This band gap can be effectively modulated by external strains. Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Solid state and materials |
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Deputy Vice Chancellor (Research & Innovation) Office > Nanotechnology & Catalysis Research Centre |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 15 Dec 2022 10:14 |
| Last Modified: | 15 Dec 2022 10:14 |
| URI: | http://eprints.um.edu.my/id/eprint/37881 |
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