Zebentout, Abdel-Djawad and Benzina, Amina and Bensaad, Zouaoui and Abid, Hamza (2020) Characterization of microwave photoswitch integrating Metal-Semiconductor-Metal photodetector. Optik, 220. ISSN 0030-4026, DOI https://doi.org/10.1016/j.ijleo.2020.165226.
Full text not available from this repository.Abstract
An experimental study implemented to present the results of the characterization of microwave photoswitches to recognize the behavior of the microwave signals under laser light of 0.85 mu m wavelength. These photoswitches consist of a coplanar line integrating a Schottky contact Metal-Semiconductor-Metal (MSM) photodetectors in the central line growth on GaAs Not Intentionally Doped (N.I.D). Those MSM photodetectors have a single electrode of different finger spacings (D) ranging from 0.2 mu m to 1 mu m and different finger widths (L) ranging from 0.2 mu m to 5 mu m. The characterizations of our optoelectronic devices made in the absence of illumination allowed us good isolation equal to -40 dB and under illumination insertion losses equal to -12.7 dB at 20 GHz. The obtained results are quite satisfying, have permitted to deduce the On/Off ratios and allowed to see the influence of the geometrical parameters on the transmission and reflection coefficients.
| Item Type: | Article |
|---|---|
| Funders: | DGRSDT |
| Uncontrolled Keywords: | Microwave photoswitch; Coplanar waveguide (CPW); GaAs Metal-Semiconductor-Metal (MSM) photodetector; S-parameters; On/Off ratio |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 13 Feb 2023 04:36 |
| Last Modified: | 13 Feb 2023 04:36 |
| URI: | http://eprints.um.edu.my/id/eprint/37388 |
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