Yu, Li M. and Aridas, Narendra K. and Latef, Tarik A. (2021) Dual-band doherty power amplifier with improved reactance compensation. Indonesian Journal of Electrical Engineering and Computer Science, 23 (3). pp. 1550-1556. ISSN 2502-4752, DOI https://doi.org/10.11591/ijeecs.v23.i3.pp1550-1556.
Full text not available from this repository.Abstract
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43 and 47, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. © 2021 Institute of Advanced Engineering and Science. All rights reserved.
| Item Type: | Article |
|---|---|
| Funders: | None |
| Uncontrolled Keywords: | Doherty; Dual-band; Power amplifier |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering > Department of Electrical Engineering |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 30 Oct 2023 07:17 |
| Last Modified: | 30 Oct 2023 07:21 |
| URI: | http://eprints.um.edu.my/id/eprint/35586 |
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