Subramaniam, Y. and Woon, Kai Lin and Nakajima, H. and Chaiprapa, J. and Songsiriritthigul, P. (2021) Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor. Synthetic Metals, 281. ISSN 0379-6779, DOI https://doi.org/10.1016/j.synthmet.2021.116901.
Full text not available from this repository.Abstract
Organic-inorganic hybrid perovskite could potentially be used to create field-effect transistors (FETs) with high field-effect mobility. However, the energy level mismatch at the deep valence band maximum perovskite-contact junction and morphological defects greatly limit the charge transport in the thin film. In this work, we demonstrated charge injection can be improved by introducing Nafion as a surface modifier on top of the Indium tin oxide. Incorporating poly (9-vinylcarbazole) PVK into a quasi-one-dimensional precursor solution induced preferential vertically orientated nanopillars as revealed by synchrotron-based two-dimensional grazing incident X-ray diffraction. This simultaneously reduced the grain boundaries and improved pin-hole free films. As a result, maximum hole mobility of 0.012 cm2/Vs was achieved with a reduction in the hysteresis. Our work demonstrated the dependence of FETs performance on the injection barrier and perovskite nanopillar microstructure.
Item Type: | Article |
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Funders: | Malaysia Fundamental Research Grant Scheme (FRGS) (FP054-2018A), Research Network NANOTEC program of the National Nanotechnology Center of Thailand |
Uncontrolled Keywords: | Vertical orientation; Hybrid organic-inorganic perovskites; Field-effect transistor; Polymer blend; Nanopillar |
Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
Divisions: | Faculty of Science > Department of Physics |
Depositing User: | Ms Zaharah Ramly |
Date Deposited: | 20 Jul 2022 04:40 |
Last Modified: | 20 Jul 2022 04:40 |
URI: | http://eprints.um.edu.my/id/eprint/28064 |
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