Zulkifli, Nur 'Adnin Akmar and Park, Kwangwook and Min, Jung-Wook and Ooi, Boon S. and Zakaria, Rozalina and Kim, Jongmin and Tan, Chee Leong (2020) A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure. Applied Physics Letters, 117 (19). p. 191103. ISSN 0003-6951, DOI https://doi.org/10.1063/5.0018076.
Full text not available from this repository.Abstract
In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm2 active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 × 1013 Jones, and fast response speeds of 13.2/13.7 μs (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications. © 2020 Author(s).
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Graphene; Heterojunctions; III-V semiconductors; Molecular beam epitaxy; Nanorods; Nitrides; Photodetectors; Photons; Silicon |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 20 Jan 2021 02:09 |
| Last Modified: | 20 Jan 2021 02:09 |
| URI: | http://eprints.um.edu.my/id/eprint/25686 |
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