Significant effect on annealing temperature and enhancement on structural, optical and electrical properties of zinc oxide nanowires

Paiman, Suriati and Hui Ling, T. and Husham, Mohammed and Sagadevan, Suresh (2020) Significant effect on annealing temperature and enhancement on structural, optical and electrical properties of zinc oxide nanowires. Results in Physics, 17. p. 103185. ISSN 2211-3797

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Official URL: https://doi.org/10.1016/j.rinp.2020.103185

Abstract

This paper focused on the growth of zinc oxide nanowires on unannealed and annealed indium tin oxide-coated-coated glass substrates on the structural, optical, and electrical properties towards surface acoustic wave (SAW) piezoelectric nanodevices. Zinc oxide nanowires (ZnO NWs) were grown onto Indium Tin Oxide (ITO)-coated glass substrates by a chemical bath deposition method. The growth of ZnO NWs carried onto unannealed and annealed Indium Tin Oxide-coated glass substrates. Substrates were annealed at 400 °C for 90 min at ambient using a horizontal furnace. This work also focused on the effect of annealing condition of ITO-coated glass substrate on nanowires morphology, crystal phase, optical band gap, and electrical properties. Substrate annealing was found to have a significant effect on the nanowires dimension. The nanowire's morphology was obtained by FESEM which the average diameter and length found on unannealed ITO-coated glass substrate were 674.18 ± 26.75 nm and 3.107 ± 0.446 μm. However, the nanowire's average diameter and length on annealed ITO-coated glass substrate were 393.50 ± 27.02 nm and 3.175 ± 0.321 μm. XRD analysis confirmed that ZnO nanowires on substrates with both conditions were able to promote the growth of crystal structure with crystal plane orientation of (1 0 1) and (1 0 0) belongs to hexagonal wurtzite structure. The near-band-edge (NBE) emission of ZnO nanowires obtained by using Photoluminescence which grown on unannealed and annealed ITO-coated glass substrates were observed at 380 nm (3.20 eV) and 384 nm (3.23 eV). FTIR analysis showed that ZnO absorption bands in the region between 450 and 500 cm−1 had arisen from interatomic vibrations due to the stretching of the Zn[sbnd]O bond. The resistivity of ZnO nanowires obtained by using the four-point probe method on unannealed and annealed substrates was found to be 2.0675 × 10−7 Ω cm and 2.0494 × 10−7 Ω cm. © 2020 The Authors

Item Type: Article
Uncontrolled Keywords: ZnO, nanowires; Annealing; Indium Tin Oxide; Electron microscopy
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Deputy Vice Chancellor (Research & Innovation) Office > Nanotechnology & Catalysis Research Centre
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 19 Aug 2020 01:39
Last Modified: 19 Aug 2020 01:39
URI: http://eprints.um.edu.my/id/eprint/25419

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