Vitee, Nandini and Ramiah, Harikrishnan and Mak, Pui-In and Yin, Jun and Martins, Rui Paulo (2020) A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 28 (3). pp. 700-713. ISSN 1063-8210, DOI https://doi.org/10.1109/TVLSI.2019.2950961.
Full text not available from this repository.Abstract
This article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order derivative transconductance component ({g}''m) is reduced by tailoring toward the optimum biasing point at the moderate-inversion region. Second, the generated IM3 current by the first-order derivative transconductance ({g}'m) due to the interaction with the feedback component in the ISD transconductor is attenuated by second-harmonic injection via the bulk of the ISD transconductor. Furthermore, a transformer-based gate inductor and a transformer-based balun are applied to improve the input impedance matching and produce a balanced differential input signal. Measured results in 0.13- μ m CMOS show a high IIP3 of +16 dBm and a conversion gain (CG) of 22 dB at 2.4 GHz. The double-sideband (DSB) noise figure (NF) is 7.2 dB, and the power consumption is 3.15 mW at 1.2 V. © 1993-2012 IEEE.
| Item Type: | Article |
|---|---|
| Funders: | Macao Science and Technology Development Fund through the SKL Fund, University of Macau under Grant MYRG2017-00185-AMSV, Motorola Solution Foundation under Grant IF017-2016 |
| Uncontrolled Keywords: | Balun-low-noise amplifier (LNA) mixer; CMOS; high linearity; inductively source degeneration transconductor; low-power; second-order intermodulation (IM2) injection; third-order input intercept point (IIP3); Volterra series |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Jun 2020 00:16 |
| Last Modified: | 11 Jun 2020 00:16 |
| URI: | http://eprints.um.edu.my/id/eprint/24778 |
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