Ahmad, Harith and Rashid, Haroon (2019) 405 nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method. Journal of Modern Optics, 66 (18). pp. 1836-1840. ISSN 0950-0340, DOI https://doi.org/10.1080/09500340.2019.1682207.
Full text not available from this repository.Abstract
In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at 350.16 and 419.36 cm−1, confirming the successful growth of the WS2 and the non-stoichiometric WS2 layers which are verified by energy-dispersive X-ray (EDX) spectroscopy. The device is characterized for its optoelectronic properties in the ultraviolet (UV) range of 405 nm. Current–voltage (I–V) measurement is performed to obtain the I–V curves of the photodiode under laser illumination at 30.219, 56.335, 80.457, 106.998 and 129.28 mW.cm−2. The photocurrent is found to be highly dependent on the laser power. The fabricated device has a high responsivity of 145.52 mA/W and a high detectivity of 1.248 × 1011 Jones for an incident laser power density of 129.28 mW.cm−2. These observed results are promising and indicate the viability of the proposed design for optoelectronic applications. © 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Higher Education, Malaysia under the Grants LRGS (2015) NGOD/UM/KPT and GA 010-2014 (ULUNG), University of Malaya under the Grants RU 013?2018 and HiCoE Phase II Funding |
| Uncontrolled Keywords: | WS2; photodetector; UV; responsivity; fall time; drop-casting |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 19 May 2020 01:21 |
| Last Modified: | 19 May 2020 01:21 |
| URI: | http://eprints.um.edu.my/id/eprint/24324 |
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