Nanoindentation creep on Cu3Sn, Cu6Sn5 and (Cu, Ni)6Sn5 intermetallic compounds grown in electrodeposited multilayered thin film

Haseeb, A.S. Md. Abdul and Rahman, Abu Zayed Mohammad Saliqur and Chia, Pay Ying (2018) Nanoindentation creep on Cu3Sn, Cu6Sn5 and (Cu, Ni)6Sn5 intermetallic compounds grown in electrodeposited multilayered thin film. Journal of Materials Science: Materials in Electronics, 29 (2). pp. 1258-1263. ISSN 0957-4522

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Official URL: https://doi.org/10.1007/s10854-017-8030-z

Abstract

Tin-based multilayered thin films were fabricated for application in three dimensional microelectronic packaging as joining materials. During device fabrication and application, interconnecting materials can be fully converted to intermetallic compounds (IMCs). As known, IMCs are generally brittle and associated with void formation which can make interconnection in the microelectronic devices vulnerable. In an effort to improve the reliability of the Sn–Cu based IMC, ultra thin layers of Ni (70 nm) were inserted into Cu/Sn system. Electrochemical deposition technique was used to fabricate the samples. Isothermal aging at 150 °C for 168 h was performed to grow the IMCs at required thickness for measuring creep by nanoindentation. Creep strain rate was calculated from experimental data. Creep resistance was significantly improved after adding the small amount of Ni in Cu/Sn multilayered thin film system.

Item Type: Article
Uncontrolled Keywords: Creep strain rate; Device fabrications; Electrochemical deposition; Joining materials; Micro-electronic devices; Microelectronic packaging; Multilayered thin films; Nanoindentation creeps
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 08 Aug 2019 08:19
Last Modified: 08 Aug 2019 08:19
URI: http://eprints.um.edu.my/id/eprint/21927

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