Krishnamoorthy, Ragavan and Kumar, Narendra and Grebennikov, Andrei and Ramiah, Harikrishnan (2018) A High-Efficiency Ultra-Broadband Mixed-Mode GaN HEMT Power Amplifier. IEEE Transactions on Circuits and Systems II: Express Briefs, 65 (12). pp. 1929-1933. ISSN 1549-7747, DOI https://doi.org/10.1109/TCSII.2018.2809491.
Full text not available from this repository.Abstract
In this brief, a new technique of efficiency enhancement of ultra-broadband RF power amplifier with simple load network approach is introduced, in which a combination of the reactance compensation and third-harmonic tuning is developed with design equations. The fabricated prototype board of the mixed mode power amplifier demonstrated 10 W output power over a wide frequency band of 0.4-2.0 GHz with an efficiency greater than 62% and observes good agreement between simulation and measured output. This implementation is suitable for two-way radio product applications.
| Item Type: | Article |
|---|---|
| Funders: | CREST, Malaysia, Motorola Solutions under Grant PV007-2015; in part by funding from PV006-2016 for technical support |
| Uncontrolled Keywords: | efficiency; GaN HEMT; lumped elements; reactance compensation; RF power amplifier |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 09 Jul 2019 06:36 |
| Last Modified: | 31 Oct 2019 09:19 |
| URI: | http://eprints.um.edu.my/id/eprint/21584 |
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