Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

Lei, Zhen Ce and Zainal Abidin, Nor Ishida and Wong, Yew Hoong (2018) Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient. Journal of Materials Science: Materials in Electronics, 29 (15). pp. 12888-12898. ISSN 0957-4522

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Official URL: https://doi.org/10.1007/s10854-018-9408-2

Abstract

The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.

Item Type: Article
Uncontrolled Keywords: Chemical analysis; Crystallite size; Germanium oxides; Oxidation; Spectrometers; Substrates; Thin films; X ray powder diffraction; Zirconia
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 17 Jun 2019 08:18
Last Modified: 17 Jun 2019 08:18
URI: http://eprints.um.edu.my/id/eprint/21491

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