Lei, Zhen Ce and Zainal Abidin, Nor Ishida and Wong, Yew Hoong (2018) Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient. Journal of Materials Science: Materials in Electronics, 29 (15). pp. 12888-12898. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-018-9408-2.
Full text not available from this repository.Abstract
The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.
| Item Type: | Article |
|---|---|
| Funders: | Frontier Research Grant (FRG) (Grant No.: FG008-17AFR), Postgraduate Research Grant (PPP) (Grant Nos.: PG221-2015B and PG031-2016A) via University of Malaya (UM), ScienceFund (Grant No.: 03-01-03-SF1083) via Ministry of Science, Technology and Innovation (MOSTI), Malaysia |
| Uncontrolled Keywords: | Chemical analysis; Crystallite size; Germanium oxides; Oxidation; Spectrometers; Substrates; Thin films; X ray powder diffraction; Zirconia |
| Subjects: | T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 17 Jun 2019 08:18 |
| Last Modified: | 17 Jun 2019 08:18 |
| URI: | http://eprints.um.edu.my/id/eprint/21491 |
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