Lim, Chee Cheow and Ramiah, Harikrishnan and Yin, Jun and Mak, Pui-In and Martins, Rui Paulo (2018) An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances. IEEE Journal of Solid-State Circuits, 53 (12). pp. 3528-3539. ISSN 0018-9200, DOI https://doi.org/10.1109/JSSC.2018.2875099.
Full text not available from this repository.Abstract
This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V ) while creating two intrinsic-high-Q impedance peaks at the fundamental (f LO ) and double (2f LO ) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm 2 .
| Item Type: | Article |
|---|---|
| Funders: | Macao Science and Technology Development Fund through SKL Fund, University of Macau under Grant MYRG2017-00185-AMSV, Motorola Foundation under Grant IF046-2017 |
| Uncontrolled Keywords: | Figure of merit (FoM); flicker noise upconversion; inverse-class-F (class-F -1 ) oscillator; phase noise (PN); second harmonic resonance; voltage-biased oscillator |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Jun 2019 04:23 |
| Last Modified: | 11 Jun 2019 04:23 |
| URI: | http://eprints.um.edu.my/id/eprint/21460 |
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