Mohd Sarjidan, Mohd Arif and Abd Majid, Wan Haliza (2018) Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode. Journal of Optoelectronics and Advanced Materials, 20 (5-6). pp. 285-289. ISSN 1454-4164,
Full text not available from this repository.Abstract
Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail.
| Item Type: | Article |
|---|---|
| Funders: | University of Malaya Research Grant (RP026B-15AFR), Postgraduate Research Grant (PG118-2015A) |
| Uncontrolled Keywords: | Current; Fowler-Nordheim model; MEH-PPV; Output and transfer characteristic; Power efficiency; VOLETs |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 15 May 2019 06:46 |
| Last Modified: | 15 May 2019 06:46 |
| URI: | http://eprints.um.edu.my/id/eprint/21234 |
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