Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

Mohd Sarjidan, Mohd Arif and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2018) Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current. Current Applied Physics, 18 (11). pp. 1415-1421. ISSN 1567-1739, DOI https://doi.org/10.1016/j.cap.2018.08.007.

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Official URL: https://doi.org/10.1016/j.cap.2018.08.007

Abstract

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density >280 mA/cm2 at Vd = 5 V. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

Item Type: Article
Funders: University of Malaya Research Grant ( RP026B-15AFR ), Post-graduate Research Grant ( PG118-2015A )
Uncontrolled Keywords: VOFETs; MEH-PPV; Saturation region; Leakage current; Electroluminescence
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 15 May 2019 06:40
Last Modified: 15 May 2019 06:40
URI: http://eprints.um.edu.my/id/eprint/21233

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