Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

Othman, Nurul Aida Farhana and Hatta, Sharifah Fatmadiana Wan Muhamad and Soin, Norhayati (2018) Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering. Journal of Electronic Materials, 47 (4). pp. 2337-2347. ISSN 0361-5235

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Official URL: https://doi.org/10.1007/s11664-017-6058-8

Abstract

Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices’ figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.

Item Type: Article
Uncontrolled Keywords: DIBL; doping concentration; FinFET; mole fraction; Sentaurus TCAD; silicon germanium; source/drain epitaxial; stress-relaxed buffer; subthreshold swing
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 24 Apr 2019 04:08
Last Modified: 24 Apr 2019 04:08
URI: http://eprints.um.edu.my/id/eprint/21051

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