Othman, Nurul Aida Farhana and Hatta, Sharifah Fatmadiana Wan Muhamad and Soin, Norhayati (2018) Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering. Journal of Electronic Materials, 47 (4). pp. 2337-2347. ISSN 0361-5235, DOI https://doi.org/10.1007/s11664-017-6058-8.
Full text not available from this repository.Abstract
Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices’ figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.
| Item Type: | Article |
|---|---|
| Funders: | University of Malaya within Ministry of Science, Technology and Innovation (MOSTI) through the Science Fund Research grant under Grant SF012-2015, Post-Graduate Research Fund under Grant PG329-2016A |
| Uncontrolled Keywords: | DIBL; doping concentration; FinFET; mole fraction; Sentaurus TCAD; silicon germanium; source/drain epitaxial; stress-relaxed buffer; subthreshold swing |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 24 Apr 2019 04:08 |
| Last Modified: | 24 Apr 2019 04:08 |
| URI: | http://eprints.um.edu.my/id/eprint/21051 |
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