An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier

Rajendran, Jagadheswaran and Hamid, Sofiyah Sal and Kunhi Mohd, Shukri Korakkottil and Abdullah, Mohd Zaid and Ramiah, Harikrishnan and Kumar, Narendra (2018) An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier. Current Science, 114 (2). pp. 308-313. ISSN 0011-3891

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Official URL: https://doi.org/10.18520/cs/v114/i02/308-313

Abstract

Here we report a novel linearization and efficiency improvement technique for heterojunction bipolar transistor (HBT)-based Wireless Code Division Multiple Access (WCDMA) power amplifier. A process solution is proposed where a tantalum nitride (TaN) layer is strapped to the HBT base metal layer that resolves the current hogging issue. This is known as the strap ballasting technique. The resistance introduced by TaN improves the linear output power without trading-off its power added efficiency. At supply voltage of 4 V, the strap ballasting methodology improves the adjacent channel leakage ratio by 4.5 dB compared to the conventional base ballasting technique at output power of 28 dBm. The corresponding improvement in power added efficiency is 4%. The maximum output power delivered by power amplifier is 36 dBm. The proposed technique can be employed in the WCDMA power amplifier to minimize the fundamental trade-off issue between linear output power and efficiency.

Item Type: Article
Uncontrolled Keywords: Heterojunction bipolar transistor; Linearization; Power amplifier; Strap ballasting technique
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 17 Apr 2019 03:02
Last Modified: 17 Apr 2019 03:02
URI: http://eprints.um.edu.my/id/eprint/20946

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