Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

Saini, Shrikant and Mele, Paolo and Osugi, Shunsuke and Adam, Malik Ismail (2018) Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. Journal of Materials Engineering and Performance, 27 (12). pp. 6286-6290. ISSN 1059-9495

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Official URL: https://doi.org/10.1007/s11665-018-3601-6

Abstract

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.

Item Type: Article
Additional Information: Adam Malik Ismail. Master of Pathology (University of Malaya)
Uncontrolled Keywords: CuAlO2; heat harvesting; oxides; pulsed laser deposition; thermoelectrics; thin films
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Medicine
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 05 Apr 2019 07:59
Last Modified: 05 Apr 2019 07:59
URI: http://eprints.um.edu.my/id/eprint/20810

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