Sangaran, Pragash and Kumar, Narendra and Rajendran, Jagadheswaran and Grebennikov, Andrei (2018) A high gain 10 watts wideband distributed power amplifier for two way radio system. Microelectronics International, 35 (1). pp. 24-32. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-10-2016-0065.
Full text not available from this repository.Abstract
Purpose – This paper aims to propose a practical design methodology of high-power wideband power amplifier. Design/methodology/approach – The distributed power amplification method is used for a Gallium Nitride device to achieve wideband operation. To achieve the high power without trading-off the bandwidth and gain, a methodology to extract the package-loading effect is proposed and verified. Findings – A maximum output power of 10 W is achieved from 100 MHz to 2 GHz with a wideband power gain of 32 dB in measurement. This performance is achieved through a single section matching network. Research limitations/implications – Measurement accuracy is dependable to the thermal behaviour of the high-power device. Practical implications – The proposed technique is an excellent solution to be used in the two way radio power amplifier that minimizes the fundamental trade-off issue between power, gain, bandwidth and efficiency. Originality/value – In this work, a practical distributed power amplifier (DPA) design methodology is proposed that reduces the development cycle time for industrial engineers working on high-power circuit design application.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Design guidelines; Distributed power amplifier; Gallium nitride; High-electron mobility transistor (HEMT); Two way radio; Wideband |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 22 Mar 2019 02:06 |
| Last Modified: | 22 Mar 2019 02:06 |
| URI: | http://eprints.um.edu.my/id/eprint/20780 |
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