An efficient wideband hafnia-bismuth erbium co-doped fiber amplifier with flat-gain over 80 nm wavelength span

Al-Azzawi, Alabbas A. and Almukhtar, Aya A. and Reddy, P.H. and Das, Shyamal and Dhar, Anirban and Paul, Mukul Chandra and Arof, Hamzah and Ahmad, Harith and Harun, Sulaiman Wadi (2019) An efficient wideband hafnia-bismuth erbium co-doped fiber amplifier with flat-gain over 80 nm wavelength span. Optical Fiber Technology, 48. pp. 186-193. ISSN 1068-5200

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Official URL: https://doi.org/10.1016/j.yofte.2019.01.012

Abstract

A new wideband erbium doped fiber amplifier (EDFA) is proposed and demonstrated, utilizing a newly fabricated hafnia-bismuth erbium co-doped fiber (HB-EDF) as a gain medium. The proposed amplifier is tested in both double-pass series and parallel configurations, using 22 cm and 150 cm long HB-EDFs to realize amplification in C and L-band wavelength region, respectively. Both series and parallel configurations obtained a wideband operation at wavelength region from 1520 to 1610 nm. At input signal power of −10 dBm, the parallel HB-EDFA achieved a flat gain of 12.1 dB with a gain ripple of less than 2 dB, along the wavelength region of 80 nm from 1525 to 1605 nm. Within the flat gain region, the noise figure was less than 11.8 dB. Overall, the parallel HB-EDFA has a better performance than the series HB-EDFA.

Item Type: Article
Uncontrolled Keywords: Hafnia-bismuth erbium fiber; EDFA; Flat-gain; Wideband optical amplifier
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 23 Jan 2019 07:12
Last Modified: 23 Jan 2019 07:12
URI: http://eprints.um.edu.my/id/eprint/20129

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