Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes

How, Gregory Thien Soon and Talik, Noor Azrina and Yap, Boon Kar and Nakajima, Hideki and Tunmee, Sarayut and Goh, Boon Tong (2019) Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes. Applied Surface Science, 473. pp. 194-202. ISSN 0169-4332

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Official URL: https://doi.org/10.1016/j.apsusc.2018.12.124

Abstract

The utilization of defects in organic-inorganic hybrid perovskite materials such as CH3NH3PbI3 is beneficial for memory applications. In this work, a simple CH3NH3PbI3 memory device with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au) yielded different switching behaviours. Using Al in ITO/CH3NH3PbI3/Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. Interestingly, by using Ag and Au cathodes to replace Al, yielded Write-Once-Read-Many (WORM) resistive switching characteristics. The conversion process from OFF to ON occur at around 4.7 V and 4.0 V for Ag and Au, respectively. The “shorting effect” remains even though a reverse voltage was applied indicating data retention. These fabricated devices could contribute to further understanding of selecting the right electrodes and open up new possibility of studies in the direction of resistive switching memory applications.

Item Type: Article
Uncontrolled Keywords: Organic-inorganic perovskite; Resistive switching; Charge trapping; Filamentary conduction
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 22 Jan 2019 01:20
Last Modified: 22 Jan 2019 01:20
URI: http://eprints.um.edu.my/id/eprint/20069

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