Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier

Fatehi, Hossein and Emami, Siamak Dawazdah and Zarifi, Atiyeh and Zahedi, Fatemeh Zahra and Mirnia, Seyed Edriss and Zarei, Arman and Ahmad, Harith and Harun, Sulaiman Wadi (2012) Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier. IEEE Journal of Quantum Electronics, 48 (8). pp. 1052-1058. ISSN 0018-9197

Full text not available from this repository.
Official URL: https://doi.org/10.1109/JQE.2012.2199739

Abstract

Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-μm region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify this region, Thulium-Bismuth-doped fiber amplifier (TBDFA) is proposed in conjunction with 800-nm pumping. Optimal Thulium ion concentration of 4.17 × 10 26 ion/m 3 and Bismuth ion concentration of 2.08 × 10 26 ion/m 3 together with low phonon energy of germanate glass lead to the highest energy transfer rates. Effective energy transfer mechanism from Bismuth to Thulium in addition to the cross relaxation process between Thulium ions results in higher amplification, efficiency, and super broadband amplification in TBDFA. We analytically solve the rate equations of TBDFA including the effect of energy transfer in order to calculate the broadband amplifier gain.

Item Type: Article
Uncontrolled Keywords: 2-μm regions; Energy transfer; Optical amplifier; Thulium-Bismuth
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 07 Jan 2019 06:18
Last Modified: 07 Jan 2019 06:18
URI: http://eprints.um.edu.my/id/eprint/19917

Actions (login required)

View Item View Item