67 cm long bismuth-based erbium doped fiber amplifier with wideband operation

Cheng, Xiau S. and Hamida, Belal Ahmed and Naji, Ahmed Wathik and Ahmad, Harith and Harun, Sulaiman Wadi (2011) 67 cm long bismuth-based erbium doped fiber amplifier with wideband operation. Laser Physics Letters, 8 (11). pp. 814-817. ISSN 1612-2011

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Official URL: https://doi.org/10.1002/lapl.201110061

Abstract

In this paper, we demonstrate a wideband Bismuthbased erbium doped fiber amplifier (Bi-EDFA) using two pieces of bismuth-based erbium-doped fiber (Bi-EDF) with a total length of 67 cm as gain media in a double pass parallel configuration. Both Bi-EDFs have an erbium ion concentration of 6300 ppm. Compared to conventional silica-based erbiumdoped fiber amplifier (Si-EDFA) with the same amount of erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth, which ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a wideband gain of around 18 dB within the wavelength region from 1530 to 1565 nm. The noise figures are maintained below 10 dB within a wide wavelength region from 1535 nm to 1620 nm.

Item Type: Article
Uncontrolled Keywords: Bismuth-based erbium doped fiber; Parallel configuration
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 02 Jan 2019 04:08
Last Modified: 02 Jan 2019 04:08
URI: http://eprints.um.edu.my/id/eprint/19877

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