Wide-Band Bismuth-Based Erbium-Doped Fiber Amplifier With a Flat-Gain Characteristic

Cheng, Xiau S. and Parvizi, Roghaieh and Ahmad, Harith and Harun, Sulaiman Wadi (2009) Wide-Band Bismuth-Based Erbium-Doped Fiber Amplifier With a Flat-Gain Characteristic. IEEE Photonics Journal, 1 (5). pp. 259-264. ISSN 1943-0655

Full text not available from this repository.
Official URL: https://doi.org/10.1109/JPHOT.2009.2037725

Abstract

In this paper, a bismuth-based erbium-doped fiber amplifier (Bi-EDFA) that operates in both the C- and L-band wavelength regions is demonstrated. The system employs two pieces of bismuth-based erbium-doped fiber (Bi-EDF) as the gain medium with a midway broadband fiber Bragg grating (FBG). The FBG functions to prevent the gain saturation at the C-band region, flatten the overall gain spectrum, and reduce the noise figure, particularly for the C-band. At an input signal power of -30 dBm and a pump power of 150 mW for both pumps, a flat gain of around 29 dB is obtained with a gain variation of ±3.5 dB within the wavelength region from 1525 to 1615 nm using a backward-pumping scheme. At an input power of 0 dBm, the gain varies from 10 to 13 dB within the wavelength range from 1530 to 1620 nm, while the corresponding noise figure varies from 9.5 to 14 dB over this wavelength range.

Item Type: Article
Uncontrolled Keywords: Bi-EDFA; Bismuth-based erbium-doped fiber; Double-pass amplifier
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 30 Nov 2018 01:23
Last Modified: 30 Nov 2018 01:23
URI: http://eprints.um.edu.my/id/eprint/19776

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