High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN

Ali, A.H. and Hassan, Z. and Shuhaimi, A. (2016) High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN. Journal of Alloys and Compounds, 681. pp. 186-190. ISSN 0925-8388

Full text not available from this repository.
Official URL: https://doi.org/10.1016/j.jallcom.2016.04.123

Abstract

This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering system in room temperature. Post-annealing treatment was conducted on the TCC after the deposition process at 600 °C for 15 min. TCC sample analysis was conducted in order to determine the structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity and optical transmittance of the post-annealed sample improved significantly as compared to the as-deposited samples. The measured electrical resistivity and optical transmittance of the post-annealed sample is 8.607 × 10−5Ω-cm and 95%, respectively resulted in high figure of merit of 5.91 × 10−2Ω−1.

Item Type: Article
Uncontrolled Keywords: Figure of merit; Annealing; Ti/Al; Indium tin oxides; Sputtering; n-GaN
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 10 Nov 2017 05:30
Last Modified: 10 Nov 2017 05:30
URI: http://eprints.um.edu.my/id/eprint/18219

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