High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor

Al-Hardan, N.H. and Hamid, M.A.A. and Ahmed, N.M. and Jalar, A. and Shamsudin, R. and Othman, N.K. and Keng, L.K. and Chiu, W.S. and Al-Rawi, H.N. (2016) High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor. Sensors, 16 (6). p. 839. ISSN 1424-8220

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Official URL: https://doi.org/10.3390/s16060839

Abstract

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Item Type: Article
Uncontrolled Keywords: Macroporous materials; Ionic conductivity; pH sensitivity
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 10 Nov 2017 03:56
Last Modified: 10 Nov 2017 03:56
URI: http://eprints.um.edu.my/id/eprint/18215

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