Vertical organic field effect phototransistor with two dissimilar source and drain contacts

Woon, K.L. and Yeo, G.N. (2014) Vertical organic field effect phototransistor with two dissimilar source and drain contacts. Thin Solid Films, 562. pp. 525-529. ISSN 0040-6090

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Abstract

A solution processable vertical organic field effect phototransistor was fabricated using poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 as the photo-active materials while poly(methyl methacrylate) is used as a dielectric layer. Interdigitated conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) is used as a source and lithium flouride/aluminum as a drain. The device exhibits current modulation when the gate is positively biased. A significant photoeffect is observed in the reverse bias mode. Unlike conventional organic phototransistors, this device can operate at a zero source–drain bias with a photosensitivity and responsivity proportional to the gate voltage. A photosensitivity of up to 105 and a responsivity of up to 2 AW− 1 are achieved in this mode. This effect is due to the presence of the weak photovoltaic behavior of this device.

Item Type: Article
Uncontrolled Keywords: Phototransistor; Poly(3-hexylthiophene); Photodiode; Vertical field effect transistor
Subjects: Q Science > Q Science (General)
Divisions: Faculty of Science
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 10 Mar 2015 07:30
Last Modified: 10 Mar 2015 07:30
URI: http://eprints.um.edu.my/id/eprint/12991

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