Woon, K.L. and Yeo, G.N. (2014) Vertical organic field effect phototransistor with two dissimilar source and drain contacts. Thin Solid Films, 562. pp. 525-529. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2014.04.080.
Full text not available from this repository.Abstract
A solution processable vertical organic field effect phototransistor was fabricated using poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C61 as the photo-active materials while poly(methyl methacrylate) is used as a dielectric layer. Interdigitated conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) is used as a source and lithium flouride/aluminum as a drain. The device exhibits current modulation when the gate is positively biased. A significant photoeffect is observed in the reverse bias mode. Unlike conventional organic phototransistors, this device can operate at a zero source–drain bias with a photosensitivity and responsivity proportional to the gate voltage. A photosensitivity of up to 105 and a responsivity of up to 2 AW− 1 are achieved in this mode. This effect is due to the presence of the weak photovoltaic behavior of this device.
Item Type: | Article |
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Funders: | UNSPECIFIED |
Uncontrolled Keywords: | Phototransistor; Poly(3-hexylthiophene); Photodiode; Vertical field effect transistor |
Subjects: | Q Science > Q Science (General) |
Divisions: | Faculty of Science |
Depositing User: | Ms. Juhaida Abd Rahim |
Date Deposited: | 10 Mar 2015 07:30 |
Last Modified: | 10 Mar 2015 07:30 |
URI: | http://eprints.um.edu.my/id/eprint/12991 |
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