Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)

Chua, C.L. and Woon, K.L. (2013) Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene). Materials Science-Poland, 31 (3). pp. 325-330. ISSN 2083-1331, DOI https://doi.org/10.2478/s13536-013-0108-6.

Full text not available from this repository.
Official URL: https://doi.org/10.2478/s13536-013-0108-6

Abstract

A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular poly(3-hexylthiophene) (RR P3HT) is investigated in this paper. It is found that different processing conditions can induce different degrees of hysteresis, which is well correlated with the charge mobility where lower hysteresis represents higher stability and hence higher charge mobility. Solvent annealing tends to create large nano-scale pinholes in P3HT which degrade the mobility.

Item Type: Article
Funders: UNSPECIFIED
Uncontrolled Keywords: Organic field effect transistor; Regioregular poly(3-hexylthiophene); Solvent annealing; Thermal annealing
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 10 Mar 2015 05:08
Last Modified: 21 Feb 2019 03:40
URI: http://eprints.um.edu.my/id/eprint/12979

Actions (login required)

View Item View Item